? semiconductor components industries, llc, 1994 october, 2016 ? rev. 15 publication order number: bc856alt1/d 1 bc856alt1g series general purpose transistors pnp silicon features ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-emitter voltage bc856, sbc856 bc857, sbc857 bc858, nsvbc858, bc859 v ceo ?65 ?45 ?30 v collector-base voltage bc856, sbc856 bc857, sbc857 bc858, nsvbc858, bc859 v cbo ?80 ?50 ?30 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc collector current ? peak i c ?200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. sot?23 (to?236) case 318 style 6 1 2 3 collector 3 1 base 2 emitter see detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ordering information marking diagram xx m xx = device code xx = (refer to page 6) m = date code* = pb?free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. 1 www. onsemi.com
bc856alt1g series www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage bc856, sbc856 series (i c = ?10 ma) bc857, sbc857 series bc858, nsbvc858 bc859 series v (br)ceo ?65 ?45 ?30 ? ? ? ? ? ? v collector ?emitter breakdown voltage bc856 s, sbc856eries (i c = ?10 a, v eb = 0) bc857a, sbc857a, bc857b, sbc857b only bc858, nsvb858, bc859 series v (br)ces ?80 ?50 ?30 ? ? ? ? ? ? v collector ?base breakdown voltage bc856, sbc856 series (i c = ?10 a) bc857, sbc857 series bc858, nsvbc858, bc859 series v (br)cbo ?80 ?50 ?30 ? ? ? ? ? ? v emitter ?base breakdown voltage bc856, sbc856 series (i e = ?1.0 a) bc857, sbc857 series bc858, nsvbc858, bc859 series v (br)ebo ?5.0 ?5.0 ?5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain bc856a, sbc856a, bc857a, sbc857a, bc858a (i c = ?10 a, v ce = ?5.0 v) bc856b, sbc856b, bc857b, sbc857b, bc858b, nsvbc858b bc857c, sbc857c bc858c (i c = ?2.0 ma, v ce = ?5.0 v) bc856a, sbc856a, bc857a, sbc857a, bc858a bc856b, sbc856b, bc857b, sbc857b, bc858b, nsvbc858b, bc859b bc857c, sbc857c, bc858c, bc859c h fe ? ? ? 125 220 420 90 150 270 180 290 520 ? ? ? 250 475 800 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small? signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) bc856, sbc856, bc857, sbc857, bc858, nsvbc858 series bc859 series nf ? ? ? ? 10 4.0 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bc856alt1g series www. onsemi.com 3 bc857/bc858/bc859/sbc857/nsvbc858 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) -0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc856alt1g series www. onsemi.com 4 bc856/sbc856 figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base?emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -2.0 -5.0 -20 -50 -100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current?gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma
bc856alt1g series www. onsemi.com 5 figure 13. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z jc (t) = r(t) r jc r jc = 83.3 c/w max z ja (t) = r(t) r ja r ja = 200 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558, bc559 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operatio n. collector load lines for specific circuits must fall below th e limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves a re valid for duty cycles to 10% provided t j(pk) 150 c. t j(p k) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce th e power that can be handled to values less than the limitatio ns imposed by the secondary breakdown.
bc856alt1g series www. onsemi.com 6 ordering information device marking package shipping ? bc856alt1g 3a sot?23 (pb?free) 3,000 / tape & reel sbc856alt1g* bc856alt3g 10,000 / tape & reel bc856blt1g 3b sot?23 (pb?free) 3,000 / tape & reel sbc856blt1g* bc856blt3g 10,000 / tape & reel sbc856blt3g* bc857alt1g 3e sot?23 (pb?free) 3,000 / tape & reel sbc857alt1g* bc857blt1g 3f sot?23 (pb?free) 3,000 / tape & reel sbc857blt1g* bc857blt3g 10,000 / tape & reel nsvbc857blt3g* bc857clt1g 3g sot?23 (pb?free) 3,000 / tape & reel sbc857clt1g* bc857clt3g 10,000 / tape & reel bc858alt1g 3j sot?23 (pb?free) 3,000 / tape & reel bc858blt1g 3k sot?23 (pb?free) NSVBC858BLT1G* bc858blt3g 3l sot?23 (pb?free) 10,000 / tape & reel bc858clt1g sot?23 (pb?free) 3,000 / tape & reel bc858clt3g sot?23 (pb?free) 10,000 / tape & reel bc859blt1g 4b sot?23 (pb?free) 3,000 / tape & reel bc859blt3g sot?23 (pb?free) 10,000 / tape & reel bc859clt1g 4c sot?23 (pb?free) 3,000 / tape & reel bc859clt3g sot?23 (pb?free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualifi ed and ppap capable.
bc856alt1g series www. onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc856alt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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